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| AOL1434 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1434 is Pb-free (meets ROHS & Sony 259 specifications). AOL1434L is a Green Product ordering option. AOL1434 and AOL1434L are electrically identical. Features VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) <6.3 m (VGS = 10V) RDS(ON) < 10 m (VGS = 4.5V) Ultra SO-8TM Top View D Fits SOIC8 footprint ! D S Bottom tab connected to drain G G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current H Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation A C Maximum 25 20 50 34 150 14 11 30 135 38 13 2.1 1 -55 to 175 Units V V A TC=25C TC=100C TA=25C TA=70C IDSM IAR EAR PD PDSM TJ, TSTG B ID IDM A A mJ W W C TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 18 49 2.5 Max 25 60 4 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOL1434 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 0.8 150 5.2 7.8 7.8 49 0.74 1.0 50 2050 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 485 280 0.86 34 VGS=10V, VDS=12.5V, ID=20A 17 5 3.5 7.5 VGS=10V, VDS=12.5V, RL=0.68, RGEN=3 IF=20A, dI/dt=100A/s 11 27 8 30 19 36 1.5 41 22 2460 6.3 9.4 10 1.4 Min 25 1 5 0.1 2.5 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumin a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. Rev0: Mar 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 10V 100 ID (A) ID(A) 3.5V 50 3.0V VGS=2.5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 6V 4.5V 40 30 125C 20 10 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 25C 1.4 60 50 VDS=5V 494 692 593 830 10 Normalized On-Resistance 1.8 193 18 8 RDS(ON) (m) VGS=4.5V 6 1.6 VGS=10V, 20A 1.4 1.2 4 VGS=10V VGS=4.5V, 20A 1 2 0 10 20 30 40 50 60 0.8 0 25 50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 59 125 100 142(C) Temperature 75 150 175 Figure 4: On-Resistance vs. Junction Temperature 12 ID=20A 10 RDS(ON) (m) IS (A) 100 10 1 0.1 0.01 125C 0.001 0.0001 0.00001 25C 125C 8 6 25C 4 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 35 40 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TC=25C 100 ID (Amps) 10s Power (W) 100s 10 RDS(ON) limited DC 1ms 3000 2500 Capacitance (pF) 2000 1500 1000 500 0 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss VDS=12.5V ID=20A Ciss 1.4 494 692 593 830 193 18 200 160 120 80 40 0 0.0001 TJ(Max)=175C TC=25C 1 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.001 59 0.1 142 (s) Pulse Width 0.01 1 10 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=4C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOL1434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 50 40 30 20 10 0.00001 TA=25C 60 50 40 30 Power Dissipation (W) 1.4 20 10 0 494 692 593 830 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 193 18 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 Power (W) TA=25C 30 20 10 0 0.01 0.1 1 59 142 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W 0.01 0.1 1 PD Ton T 100 1000 0.0001 0.001 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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